SiA432DJ
t 1
t 2
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
Vishay Siliconix
Notes:
P DM
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68697 .
S14-0179-Rev. C, 10-Feb-14
6
Document Number: 68697
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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